光學元件

特崴光波導為達成模組設計及製造的垂直整合,並維持光電模組批量化的品質,亦進行了主要光學元件的自製化。 

特崴光波導目前已完成開發及驗證的光學元件”Top Emission – MM 850nm 14Gbps & 25Gbps VCSEL & PD”,可同時滿足COB及Flip chip封裝製程的需求,該類產品除應用於自製光電模組外,亦已陸續獲得國內外客戶的驗證及導入於新產品設計中。
除波長850nm的產品外,特崴還開發了傳輸速率14/25Gbps、波長980nm、正向和背向功能的光學晶片。 我們確保它們具有卓越的性能和良好的可靠性。 此外,背向功能的光學晶片可採用更高效的引線鍵合製程以取代倒裝晶片。

VCSEL

(Vertical Cavity Surface Emitting Laser)

MM 850nm 14Gbps

(Top Emission)

QZV14MM0850TX0X is multimode 14Gbps VCSEL with wavelength 850nm device has low electrical parasitics and proven high reliability.

MM 850nm 25Gbps

(Top Emission)

QZV25MM0850TX0X is multimode 25Gbps VCSEL with wavelength 850nm device has low electrical parasitics and proven high reliability.

MM 980nm 14Gbps

(Top Emission)

QZV14MM0980TX0X is multimode 14Gbps VCSEL with wavelength 980nm device has low electrical parasitics and proven high reliability.

MM 980nm 25Gbps

(Top Emission)

QZV25MM0980TX0X is multimode 25Gbps VCSEL with wavelength 980nm device has low electrical parasitics and proven high reliability.

MM 980nm 25Gbps

(Bottom Emission)

QZV25MM0980BX0X is multimode 25Gbps VCSEL with wavelength 980nm device has low electrical parasitics and proven high reliability.

PD

(Photodiode)

MM 850nm 14Gbps

(Top Illumination)

QZP14MM0850TX0X is a front-side illuminated GaAs PIN photodiode chip has 64um detection window and excellent performances, like low capacitance, high responsivity, low dark current, and reliability in field.

MM 850nm 25Gbps

(Top Illumination)

QZP25MM0850TX0X is a front-side illuminated GaAs PIN photodiode chip has a 50um detection window and excellent performances, like low capacitance, high responsivity, low dark current, and reliability in field.

MM 980nm 14Gbps

(Top Illumination)

QZP14MM0980TX0X is a front-side illuminated InGaAs PIN photodiode chip has a 64um detection window and excellent performances, like low capacitance, high responsivity, low dark current, and reliability in field.

MM 980nm 25Gbps

(Bottom Illumination)

QZP25MM0980BX0X is a bottom-side illuminated InGaAs PIN photodiode chip has a 50um detection window and excellent performances, like low capacitance, high responsivity, low dark current, and reliability in field.
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